Wednesday, 3 October 2018: 16:10-17:50
Universal 13 (Expo Center)
Chair:
Jean-Michel Hartmann
16:10
(Invited) Epitaxy of Direct Bandgap Group IV Si-Ge-Sn Alloys towards Heterostructure Light Emitters
N. von den Driesch (Forschungszentrum Jülich GmbH, RWTH Aachen), D. Stange, D. Rainko, I. Povstugar, U. Breuer (Forschungszentrum Jülich GmbH), Z. Ikonic (University of Leeds), J. M. Hartmann (Univ. Grenoble Alpes, CEA, LETI, 38000 Grenoble, France), M. A. Schubert (IHP Microelectronics), G. Capellini (IHP Microelectronics, Dip. Scienze, Università Roma Tre), H. Sigg (Paul Scherrer Institut), S. Mantl, D. Grützmacher, and D. Buca (Forschungszentrum Jülich GmbH)
16:40
Advantages of Faceted P-Raised Source/Drain in Fully Depleted Silicon on Insulator Technology
Ö. I. Aydin (GLOBALFOUNDRIES), J. R. Holt (GLOBALFOUNDRIES INC.), C. Le Royer (CEA-LETI), L. Vanamurthy (GLOBALFOUNDRIES), T. Feudel (globalfoundries), T. Heyne, R. Gerber, M. Lenski, S. Jansen, D. Utess, C. Klein, A. Peeva, G. R. Mulfinger, T. J. McArdle, D. Barge (GLOBALFOUNDRIES), A. Divay (CEA LETI), S. Lehmann, E. Smith, C. Peters, and J. U. Sachse (GLOBALFOUNDRIES)
17:00
Investigation of the Growth of Si-Ge-Sn Pseudomorphic Layers on 200 mm Ge Virtual Substrates: Impact of Growth Pressure, HCl and Si2H6 Flows
R. Khazaka (CEA-LETI), J. Aubin (CEA, LETI, Minatec Campus, Grenoble, France), E. Nolot (CEA, LETI), and J. M. Hartmann (Univ. Grenoble Alpes, CEA, LETI, 38000 Grenoble, France)
