FET 1

Sunday, 30 September 2018: 10:30-12:20
Universal 13 (Expo Center)
Chair:
Aaron Thean
10:30
1009
(Invited) Hybrid III-V/Si CMOS Technology Platform: From Materials for Logic to Integrated RF and Photonics
L. Czornomaz (IBM Zurich Research Laboratory)
11:00
1010
(Invited) Epitaxial Germanium and Germanium Tin Alloys By Thermal Chemical Vapor Deposition
Y. C. Huang (Applied Materials)
11:30
1011
Composition and Strain Evolution of Undoped Si0.8Ge0.2 Layers Submitted to UV-Nanosecond Laser Annealing
L. Dagault (Univ. Grenoble Alpes, CEA, LETI, 38000 Grenoble, France, CNRS, LAAS), P. Acosta-Alba, S. Kerdilès, J. P. Barnes, J. M. Hartmann, P. Gergaud, T. T. Nguyen, A. Grenier (Univ. Grenoble Alpes, CEA, LETI, 38000 Grenoble, France), J. Aubin (SCREEN-LASSE, 92230 Gennevilliers, France), and F. Cristiano (CNRS, LAAS)
11:50
1012
(Invited) The Scaling-Down and Performance Optimization of InAs Nanowire Field Effect Transistors
Q. Chen and W. Yang (Peking University)
See more of: G03: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 8
See more of: Electronic Materials and Processing
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