Processing

Wednesday, 3 October 2018: 10:30-12:30
Universal 13 (Expo Center)
Chair:
Andreas Mai
10:30
1062
(Invited) Full Wafer CMOS-Compatible Integration of Ge with Si By Direct Wafer Bonding
F. Gity (Tyndall National Institute)
11:00
1063
The Growth of GeSn Layer on Patterned Si Substrate by MBE Method
C. Li (School of Science, Minzu University of China), S. Feng, X. Chen, Y. Wang (School of Science,Minzu University of China), and B. Cheng (Institute of Semiconductors, Chinese Academy of Sciences)
11:20
1064
Melting and Crystallization of Amorphous Germanium Films on Insulating Substrate By Atmospheric Pressure Micro-Thermal-Plasma-Jet
S. Higashi, H. Harada, and T. Nakatani (Hiroshima University)
11:40
1065
Boosting Ge-Epi P-Well Mobility & Crystal Quality with Si or Sn Implantation and Melt Annealing
J. O. Borland (J.O.B. Technologies), A. Joshi (Active Layer Parametrics), B. Basol (ALP Inc), Y. J. Lee (National Nano Device Labs), T. Kuroi (Nissin), T. Tabata (LASSE-Screen), K. Huet (SCREEN-LASSE, Gennevilliers, France), G. Goodman, N. Khapochkina, and T. Buyuklimanli (EAG)
12:00
1066
(Invited) Si(1-x)Gex/Si Mqw Based Uncooled Microbolometer Development and Integration into 130 nm BiCMOS Technology
C. Baristiran Kaynak, Y. Yamamoto, A. Göritz, F. Korndoerfer, P. Zaumseil, P. Kulse, K. Schulz, M. Fraschke, S. Marschmeyer, D. Wolansky, M. Wietstruck (IHP), A. Shafique, Y. Gurbuz (Sabanci University), and M. Kaynak (IHP)
See more of: G03: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 8
See more of: Electronic Materials and Processing
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