SiC Technologies 2

Wednesday, 3 October 2018: 14:00-15:20
Universal 5 (Expo Center)
Chairs:
Hrishikesh Das and Govindhan Dhanaraj
14:00
1293
(Invited) Controlling the Carbon Vacancy in 4H-SiC by Thermal Processing
H. M. Ayedh, M. E. Baathen, A. Galeckas (University of Oslo), J. U. Hassan, J. P. Bergman (Linkoping University), R. Nipoti (CNR-IMM Bologna), A. Hallen (Royal Institute of Technology), and B. G. Svensson (University of Oslo)
14:40
1294
Study of Baseplate Materials for High-Temperature Operation of SiC Power Modules
K. Koui (AIST, Calsonic Kansei Corp.,), F. Kato (AIST), H. Tanisawa (AIST, Sanken Electric Co., Ltd.), S. Sato (AIST), Y. Murakami (NISSAN MOTOR CO., LTD.), and H. Sato (AIST)
15:00
1295
Thermal Resistance Evaluation of a Low-Inductance Double-Stacked SiN-AMC Substrate for a High-Temperature Operation SiC Power Module
F. Kato, S. Sato (AIST), H. Tanisawa (AIST, Sanken Electric Co., Ltd.), K. Koui (AIST, Calsonic Kansei Corp.,), K. Watanabe (AIST), Y. Murakami (NISSAN MOTOR CO., LTD.), H. Yamaguchi, and H. Sato (AIST)
See more of: H05: Gallium Nitride and Silicon Carbide Power Technologies 8
See more of: Electronic and Photonic Devices and Systems
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