GaN and AlGaN Technologies

Tuesday, 2 October 2018: 14:00-17:20
Universal 5 (Expo Center)
Chairs:
Michael Shur and Mark S. Goorsky
14:00
1282
(Invited) Material Advances Toward Vertically-Conducting AlGaN Power Transistors
A. A. Allerman, G. W. Pickrell, A. M. Armstrong, M. H. Crawford, K. C. Ceilo, A. A. Talin, F. Léonard, R. J. Kaplar, J. R. Dickerson, and V. M. Abate (Sandia National Laboratories)
14:40
1283
N- and P- type Doping in Al-rich AlGaN and AlN
B. Sarkar, S. Washiyama, M. H. Breckenridge, A. Klump, J. N. Baker (North Carolina State University), P. Reddy, J. Tweedie, S. Mita, R. Kirste (Adroit Materials Inc.), D. L. Irving, R. Collazo, and Z. Sitar (North Carolina State University)
15:20
Break
15:40
1284
(Invited) Polarization-Induced Doping in Graded AlGaN Epilayers Grown on AlN Single Crystal Substrates
R. Dalmau and B. Moody (HexaTech, Inc.)
16:20
1285
(Invited) A Revolutionary GaN-on-SiC Heteroepitaxy for High-Frequency Power Transistors
J. T. Chen (SweGaN AB), J. Bergsten, A. Malmros (Chalmers University), E. Janzén (SweGaN AB), M. Thorsell, N. Rorsman (Chalmers University), and O. Kordina (SweGaN AB)
17:00
1286
Theoretical Study of the Electronic Structure of Threading Edge Dislocations in GaN
T. Nakano (Graduate School of Engineering, Nagoya University), M. Araidai, K. Shiraishi, A. Tanaka, Y. Honda, and H. Amano (IMaSS, Nagoya University)
See more of: H05: Gallium Nitride and Silicon Carbide Power Technologies 8
See more of: Electronic and Photonic Devices and Systems
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