Neuromorphic Devices and Systems 2

Wednesday, 3 October 2018: 14:00-15:40
Universal 7 (Expo Center)
Chairs:
Hisashi Shima and Kiyoteru Kobayashi
14:00
739
(Invited) The Non-Volatile Redox Memory for Neuromorphic Computing
A. A. Talin (Sandia National Labs)
14:40
740
Toward an Empirical Compact Model for Crossbar Integrated Metal-Oxide Memristors
A. F. Vincent, H. Nili, M. Prezioso, M. R. Mahmoodi, F. Merrikh Bayat, and D. B. Strukov (UC Santa Barbara)
15:00
741
SNN Pattern Recognition Using Amorphous Carbon Oxide Based Synapse and Fully-Depleted Strained Silicon-on-Insulator n-Mosfet Neuron
D. W. Kim, K. H. Kwon, H. J. Kim, S. M. Jin, H. M. Yang, and J. G. Park (Hanyang University)
15:20
742
Eco-Friendly All-Inorganic Perovskite Memristors and Artificial Synapses
S. G. Kim (Seoul National University, Samsung Electronics) and H. W. Jang (Seoul National University)
See more of: D04: Nonvolatile Memories 6
See more of: Dielectric Science and Materials
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