Metrology

Wednesday, 3 October 2018: 14:00-15:50
Universal 13 (Expo Center)
Chair:
Andreas Schulze
14:00
1067
(Invited) Advanced CMOS Scaling: Challenges, Metrology and Characterization Needs
S. S. Liao (Logic Technology Development, Intel Corporation)
14:30
1068
(Invited) High-Resolution X-Ray Diffraction Characterization and Metrology for Advanced Logic
M. Wormington (Bruker Semiconductor Division (USA)), P. A. Ryan (Bruker Semiconductor Division (UK)), N. Kasper (Bruker Semiconductor Division (Germany)), and P. Gin (Bruker Semiconductor Division (USA))
15:00
1069
Ascertaining the Nature and Distribution of Extended Crystalline Defects in Emerging Semiconductor Materials Using Electron Channeling Contrast Imaging
A. Schulze (imec), H. Han (imec, KU Leuven), L. Strakos, T. Vystavel (Thermo Fisher Scientific), C. Porret, R. Loo, and M. Caymax (imec)
15:20
1070
(Invited) Determining Si Composition in SiGe Alloys with < 1% Si Concentrations Using Raman Spectroscopy
I. De Wolf (KU Leuven, imec), V. Simons, S. A. Srinivasan, P. Verheyen, and R. Loo (imec)
See more of: G03: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 8
See more of: Electronic Materials and Processing
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