Wide Bandgap Devices

Monday, 1 October 2018: 08:30-11:50
Universal 24 (Expo Center)
Chairs:
Jennifer K. Hite and Mark S. Goorsky
08:30
1153
(Invited) High-Speed GaN-Based Micro-Scale Light-Emitting Diodes for Visible-Light Communication
D. Feezell, M. Monavarian, A. Rashidi, and A. Aragon (University of New Mexico)
09:00
1154
(Invited) the Progress and Outlook of GaN Laser Devices
J. Han (Department of Electrical Engineering, Yale University)
09:30
Break
10:00
1155
(Invited) Process Development for GaN-Based Photoconductive Semiconductor Switches (PCSS)
T. J. Anderson, A. D. Koehler, L. E. Luna, J. C. Gallagher, J. K. Hite, M. A. Mastro, A. G. Jacobs, B. Feigelson, K. D. Hobart, and F. J. Kub (U.S. Naval Research Laboratory)
10:30
1156
(Invited) Advanced GaN Device Technologies for Power Electronics Applications
G. W. Pickrell, A. M. Armstrong, A. A. Allerman, M. H. Crawford (Sandia National Laboratories), D. Feezell, M. Monavarian, I. Stricklin (University of New Mexico), F. J. Zutavern, A. Mar, E. Hirsch, J. D. Flicker, J. J. Delhotal (Sandia National Laboratories), J. D. Teague, J. M. Lehr (University of New Mexico), K. C. Cross, C. E. Glaser, M. S. Van Heukelom, R. J. Gallegos, V. H. Bigman, and R. J. Kaplar (Sandia National Laboratories)
11:00
1157
(Invited) III-V Piezoelectrics for Sensors, Actuators, and Resonators
B. Griffin (Sandia National Laboratories)
11:30
1158
Vertical and Lateral GaN Power Devices Enabled By Engineered GaN Substrates
L. E. Luna (U.S. Naval Research Laboratory), T. J. Anderson (NRL), A. D. Koehler (Naval Research Laboratory), M. J. Tadjer (U.S. Naval Research Laboratory), O. Aktas (Qromis), K. D. Hobart (Naval Research Laboratory), and F. J. Kub (U.S. Naval Research Laboratory)
See more of: H01: State-of-the-Art Program on Compound Semiconductors 61 (SOTAPOCS 61)
See more of: Electronic and Photonic Devices and Systems
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