Narrow Bandgap Materials and Devices

Tuesday, 2 October 2018: 10:00-11:40
Universal 24 (Expo Center)
Chair:
Colm O'Dwyer
10:00
1163
(Invited) Interface and Border Traps, Their Passivation and the Reliability of Alumina Dielectric / Indium Gallium Arsenide Gate Stacks
P. C. McIntyre (Stanford University)
10:30
1164
(Invited) Investigating the Electronic Properties of Narrow Band Gap III-V Mos Systems
P. K. Hurley (Tyndall National Institute, University College Cork), J. Lin (Tyndall National Institute), E. Caruso (Tyndall Institute, University College Cork), S. Monaghan (University College Cork), F. Gity (Tyndall National Institute), É. O'Connor (University College Cork), L. Floyd, K. Cherkaoui (Tyndall National Institute, University College Cork), I. M. Povey (Tyndall National Insititute UCC), D. A. J. Millar, U. Peralagu, and I. G. Thayne (University of Glasgow)
11:00
1165
Investigating Polycrystalline III-V Thin Films As Channel Materials for “Above IC” Logic and Memory Applications
A. Curran, E. Secco, A. Pescaglini, A. Gocalinska, E. Mura, K. Thomas (Tyndall National Institute), I. M. Povey (Tyndall National Insititute UCC), E. Pelucchi (Tyndall National Institute), C. O'Dwyer (School of Chemistry, University College Cork), P. K. Hurley, and F. Gity (Tyndall National Institute)
11:20
1166
Buried-Heterostructure Quantum Cascade Lasers Fabricated Using a Sacrificial Layer and a Two-Step Regrowth Process
R. Driad, A. Bächle, R. Aidam, and Q. Yang (Fraunhofer - IAF)
See more of: H01: State-of-the-Art Program on Compound Semiconductors 61 (SOTAPOCS 61)
See more of: Electronic and Photonic Devices and Systems
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