Optoelectronics 1

Sunday, 30 September 2018: 08:30-10:10
Universal 13 (Expo Center)
Chair:
Gianlorenzo Masini
08:30
(Invited) Design and Modeling of Sigesn Lasers: From Modeling Experiments to Future Device Concepts
J. Witzens, B. Marzban (RWTH Aachen University), D. Stange, N. von den Driesch, D. Buca (Forschungszentrum Jülich GmbH), and Z. Ikonic (University of Leeds)
09:00
(Invited) Strain-Engineered Low-Threshold Group IV Lasers for Photonic-Integrated Circuits
Y. Jung, M. Luo, Z. Qi, H. Sun, and D. Nam (Nanyang Technological University)
09:30
Silicon-Germanium Stressors for Germanium Photonic Devices on Silicon
M. Nishimura (The University of Tokyo, Toyohashi University of Technology), K. Kawashita, and Y. Ishikawa (Toyohashi University of Technology)
09:50
Amplified Spontaneous Emission from Gesn Waveguides at Room Temperature
J. Mathews (Physics Dept., University of Dayton), Z. Li, E. Ghanati (Dept. of Electro-Optics and Photonics, Univ. of Dayton), I. Agha (Dept. of Physics, Univ. of Dayton, Dept. of Electro-Optics and Photonics, Univ. of Dayton), J. Menendez (Dept. of Physics, Arizona State Univ.), and J. Kouvetakis (School of Molecular Science, Arizona State Univ.)