Optoelectronics 2

Sunday, 30 September 2018: 14:00-15:40
Universal 13 (Expo Center)
Chair:
Gianlorenzo Masini
14:00
1013
(Invited) High-Performance Si Optical Modulator and Ge Photodetector and Their Application to Silicon Photonics Integrated Circuit
J. Fujikata, S. Takahashi, T. Mogami, K. Kurata (PETRA), M. Takenaka (The University of Tokyo), and T. Nakamura (PETRA)
14:30
1014
(Invited) Defect Engineering in Ge QDs for Light Emission in Si Photonics
M. Brehm (Johannes Kepler University Linz)
15:00
1015
Low Dark Current Ge/Si Photodetector Grown By Selective Epitaxial Growth
B. Cheng, Z. Liu, X. Li, F. Yang, C. Xue (Institute of Semiconductors, Chinese Academy of Sciences), C. Li (School of Science, Minzu University of China), J. Zheng, Y. Zuo, and Q. Wang (Institute of Semiconductors, Chinese Academy of Sciences)
15:20
1016
MBE-Grown SixGe1-x-ySny Diode and Quantum Well Diode Structures with High Sn Content for Optical Applications
D. Schwarz, C. J. Clausen, I. A. Fischer, H. S. Funk, M. Oehme, D. Weißhaupt, and J. Schulze (University of Stuttgart)
See more of: G03: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 8
See more of: Electronic Materials and Processing
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