Surfaces and Interfaces 1

Tuesday, 2 October 2018: 16:00-17:40
Universal 13 (Expo Center)
Chairs:
Seiichi Miyazaki and Paul C. McIntyre
16:00
1054
(Invited) High-Performance Optoelectronic Devices Based on Silicon Nanocrystals
X. Pi (Zhejiang Unversity)
16:30
1055
(Invited) Large-Scale DFT Study of Ge/Si 3D Nanoislands and Core-Shell Nanowires
T. Miyazaki (National Institute for Materials Science)
17:00
1056
In-Plane Solid-Liquid-Solid Growth and Engineering of Si and Si/Ge Nanowires for Integratable High Performance Fin-like Thin Film Transistors
L. Yu (Nanjing University)
17:20
1057
Highly n-Type Doped Ge and Gesn Wires Fabricated By Lateral Liquid-Phase Epitaxy
H. Watanabe, T. Tomita, H. Oka, K. Inoue, T. Hosoi, and T. Shimura (Osaka University)
See more of: G03: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 8
See more of: Electronic Materials and Processing
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