Joint Session: Strain & Metrology & Characterization

Thursday, 4 October 2018: 15:10-17:00
Universal 13 (Expo Center)
Chairs:
Atsushi Ogura and Andreas Schulze
15:10
1087
(Invited) High-Sn Concentration MOCVD-Grown Strained GeSn Thin Films Evaluated Using HAXPES and XRD Base on Synchrotron Technique
K. Usuda (Toshiba Memory Corporation), M. Yoshiki (Toshiba Corporation), K. Suda, A. Ogura (Meiji University), and M. Tomita (Toshiba Memory Corporation)
15:40
1088
Decoupling Strain and Composition Effects on Ge1-YSny Lattice Vibrations
É. Bouthillier, S. Assali, J. Nicolas, and O. Moutanabbir (École Polytechnique de Montréal)
16:00
1089
Mapping Strain and Composition Effects on Gesn Band Structure Using Spectroscopic Ellipsometry
A. Attiaoui, S. Assali, J. Nicolas, and O. Moutanabbir (École Polytechnique de Montréal)
16:20
1090
Determination of Phonon Deformation Potentials in Carbon-Doped Silicon
K. Yoshioka (Meiji University), R. Yokogawa (JSPS Research Fellow, Meiji University), T. Murakami, S. Komago, N. Sawamoto, and A. Ogura (Meiji University)
16:40
1091
An Interpretation for Defect-Induced Structural Transformation in SiC
T. Ito, T. Akiyama, K. Nakamura, and A. M. Pradipto (Mie University)
See more of: G03: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 8
See more of: Electronic Materials and Processing
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