Characterization and Simulation

Monday, 1 October 2018: 10:40-11:50
Universal 7 (Expo Center)
Chairs:
Durgamadhab Misra and Shadi Dayeh
10:40
690
(Invited) Sub-Nm Quantification of Point Defects in Ceramics and Semiconductors Using Atom Probe Tomography
B. P. Gorman and D. R. Diercks (Colorado School of Mines)
11:10
691
Simulations of Correlative Defect Forming in Hafnia
A. A. Pil'nik, A. A. Chernov (Novosibirsk State University, Kutateladze Institute of Thermophysics SB RAS), T. V. Perevalov (Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk State University), and D. R. Islamov (Novosibirsk State University, Rzhanov Institute of Semiconductor Physics SB RAS)
11:30
692
Electronic Structure of Tantalum Oxide with Oxygen Vacancy and Polyvacancy, Oxygen Interstitial, Tantalum Interstitial and Tantalum Substituting Oxygen
T. V. Perevalov (Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk State University) and D. R. Islamov (Novosibirsk State University, Rzhanov Institute of Semiconductor Physics SB RAS)
See more of: D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 16
See more of: Dielectric Science and Materials
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