G04 Session 3

Wednesday, 3 October 2018: 14:30-17:30
Universal 16 (Expo Center)
Chair:
Colm O'Dwyer
14:30
1101
(Invited) Development of Thermoelectric Materials and Thermal Interface Materials By Pulsed Electroplating
D. Xu (The Chinese University of Hong Kong)
15:00
1102
(Invited) First Principles Study of Electron Mobility of Mg2Si and Beyond
F. Meng (Clemson University), J. Ma (Shenzhen University), J. He (Clemson), and W. Li (Shenzhen University)
15:30
1103
Impact of Ni Content on the Thermoelectric Properties of Half-Heusler Thermoelectrics
Y. Tang, D. Landmann, and C. Battaglia (Empa - Swiss Federal Laboratories for Materials Science)
15:50
1104
(Invited) Thermoelectric Studies of Graphene Antidot Lattices and Beyond
Q. Hao (University of Arizona)
16:20
1105
(Invited) Advances in Testing Inorganic & Hybrid Organic Thermoelectric Thin Films
H. Baumgart (Old Dominion University, ECE Department), X. Chen (Applied Research Center), V. Linseis (Leibniz Institute for Solid State & Mat. Research (IFW)), E. Redel (IFG (institute of Functional Interfaces), KIT (Karlsruhe Institute of Technology)), and H. Reith (IFW Dresden, Dresden, Germany)
16:50
1106
Electrodeposition in Supercritical Fluids
A. Black, P. N. Bartlett, D. A. Cook, G. Reid, W. Zhang, D. C. Smith, and M. Alibouri (University of Southampton)
17:10
1107
Thermoelectric Characteristics of N-type Bi-Te Materials by Powder-Based Sintering Process
H. Y. Koo, G. H. Ha, and M. S. Park (Korea Institute of Materials Science (KIMS))
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