TFT Materials 1

Monday, 1 October 2018: 14:00-16:00
Universal 6 (Expo Center)
Chair:
Karl D Hirschman
14:00
1201
(Invited) High-Performance Thin-Film Transistors Based on Metal Oxynitride Semiconductors
H. D. Kim and H. S. Kim (Chungnam National University)
14:30
1202
(Invited) New p-Type Oxide Semiconductor with High Hole Mobility over 7 cm2/Vs Formed By Solution Process
S. H. Cho, S. Nam, C. S. Hwang, and S. J. Lee (ETRI)
15:00
1203
(Invited) Organic-Inorganic Hybrid Perovskite Tfts with MoO3 Modified Electrodes
J. Li, J. Xu, L. Tang, P. Ze, Z. Zhou, and J. Zhang (Institute of Photo-Electronics, Nankai University)
15:30
1204
(Invited) 2D Semiconductor Materials for Thin Film Transistor Applications
D. Pribat (CNRS/Ecole polytechnique)
See more of: H03: Thin Film Transistor Technologies 14 (TFTT 14)
See more of: Electronic and Photonic Devices and Systems
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