Charateristics of Low Temperature High Quality Silicon Oxide by Plasma Enhanced Atomic Layer Deposition with In Situ Plasma Densification Process

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Charateristics of Low Temperature High Quality Silicon Oxide by Plasma Enhanced Atomic Layer Deposition with In Situ Plasma Densification Process

Wednesday, May 15, 2013

Osgoode Ballroom, Lower Concourse Level (Sheraton)

Haiwon Kim , Research and Development group, Eugene Technology, Yongin, South Korea

Sergey N. Zaretskiy , Research and Development group, Eugene Technology

Seungwoo Shin , Research and Development group, Eugene Technology

Wooduck Jung , Research and Development group, Eugene Technology

Ryong Hwang , Research and Development group, Eugene Technology

Choonsik Jeong , Research and Development group, Eugene Technology

Seongjin Park , Research and Development group, Eugene Technology

Hanna Hwang , Research and Development group, Eugene Technology

Ilsub Chung , College of Information and Communication Engineering, Sungkyunkwan University

Abstract: