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Temperature Dependent Instability of Drain Bias Stress in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
Temperature Dependent Instability of Drain Bias Stress in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
Tuesday, May 14, 2013: 12:00
Spruce, Mezzanine Level (Sheraton)
Abstract:
- E9-0928 (9.5KB) - Abstract Text