Electronic Devices

Tuesday, May 14, 2013: 10:00-12:20
Spruce, Mezzanine Level (Sheraton)
Chairs:
E. B. Stokes, PhD and Ray-Hua Horng, Dr.
10:00
922
A Novel Detection of Non-Nucleoside Reverse Transcriptase Inhibitors (NNRTIs) for HIV-1 with AlGaN/GaN High Electron Mobility Transistors
Yen-Wen Kang, National Tsing Hua University; Geng-Yen Lee, National Central University; Jen-Inn Chyi, National Central University; Chen-Pin Hsu, National Tsing Hua University; You-Ren Hsu, National Tsing Hua University; Chih-Cheng Huang, National Tsing Hua University; Fan Ren, University of Florida; Yu-Lin Wang, Ph.D., National Tsing Hua University
10:20
923
High Resolution Patterning of Oxide Semiconductor Transistor by Electrohydrodynamic Jet Printing
Junghyun Choi, Hanyang University; Taeseup Song, Hanyang University; Sangkyu Lee, Hanyang University; Joo Hyun Kim, Hanyang University; Seungki Hong, Hanyang University; Hyungkyu Han, Hanyang University; Jeonghyun Kim, Hanyang University; Hyunjung Park, Hanyang University; Yeryung Jeon, Hanyang University; Ungyu Paik, Hanyang University
10:40
924
Low Leakage Current GaN MIS-HEMT with SiNx Gate Insulator using N2 Plasma Treatment
Shih-Chien Liu, National Chiao-Tung University Department of Materials Science and Engineering; Huan-Chung Wang, National Chiao-Tung University Department of Materials Science and Engineering; Edward Yi Chang, National Chiao-Tung University Department of Materials Science and Engineering
11:00
925
Thickness Dependent Electrical Characteristics of InAlN/GaN-On-Si MOSHEMTs with Y2O3 Gate Dielectric and Au-Free Ohmic Contact
Milan Kumar Bera, Ph.D, National University of Singapore; Yi Liu, Ph.D Student, National University of Singapore; Lwin Min Kyaw, Ph.D Student, National University of Singapore; Yi Jie Ngoo, National University of Singapore; Eng Fong Chor, Ph.D., National University of Singapore
11:20
926
Gold-Free InAlN/GaN Schottky Gate HEMT On Si (111) Substrate with ZrO2 Passivation
Lwin Min Kyaw, Ph.D Student, National University of Singapore; Yi Liu, Ph.D Student, National University of Singapore; Milan Kumar Bera, Ph.D, National University of Singapore; Yi Jie Ngoo, National University of Singapore; Sudhiranjan Tripathy, Ph.D, Institute of Material Research and Engineering, Singapore; Eng Fong Chor, Ph.D., National University of Singapore
11:40
927
Amorphous HfInZnO Thin Film Transistors for Use in Harsh Environment
Shih-Guo Yang, National Taiwan University; Jose Ramon Duran Retamal, National Taiwan University; Po-Kang Yang, National Taiwan University; Der-Hsien Lien, National Taiwan University; Jr-Hau He, National Taiwan University
12:00
928
Temperature Dependent Instability of Drain Bias Stress in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
Geng-Wei Chang, National Chiao Tung University; Ting-Chang Chang, National Sun Yat-Sen University; Yong-En Syu, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan; Jhe-Ciou Jhu, National Sun Yat-Sen University; Kuan-Chang Chang, National Sun Yat-Sen University; Tsung-Ming Tsai, National Sun Yat-Sen University; Ya-Hsiang Tai, National Chiao Tung University
See more of: E9: Wide-Bandgap Semiconductor Materials and Devices 14
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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