927
Amorphous HfInZnO Thin Film Transistors for Use in Harsh Environment

Tuesday, May 14, 2013: 11:40
Spruce, Mezzanine Level (Sheraton)
Shih-Guo Yang , National Taiwan University, Taipei, Taiwan
Jose Ramon Duran Retamal , National Taiwan University
Po-Kang Yang , National Taiwan University
Der-Hsien Lien , National Taiwan University
Jr-Hau He , National Taiwan University

Abstract:

See more of: Electronic Devices
See more of: E9: Wide-Bandgap Semiconductor Materials and Devices 14
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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