926
Gold-Free InAlN/GaN Schottky Gate HEMT On Si (111) Substrate with ZrO2 Passivation
Tuesday, May 14, 2013: 11:20
Spruce, Mezzanine Level (Sheraton)
Lwin Min Kyaw, Ph.D Student
,
National University of Singapore, Singapore, Singapore
Yi Liu, Ph.D Student
,
National University of Singapore, Singapore, Singapore
Milan Kumar Bera, Ph.D
,
National University of Singapore, Singapore, Singapore
Yi Jie Ngoo
,
National University of Singapore, Singapore, Singapore
Sudhiranjan Tripathy, Ph.D
,
Institute of Material Research and Engineering, Singapore, Singapore, Singapore
Eng Fong Chor, Ph.D.
,
National University of Singapore, Singapore, Singapore
