925
Thickness Dependent Electrical Characteristics of InAlN/GaN-On-Si MOSHEMTs with Y2O3 Gate Dielectric and Au-Free Ohmic Contact

Tuesday, May 14, 2013: 11:00
Spruce, Mezzanine Level (Sheraton)
Milan Kumar Bera, Ph.D , National University of Singapore, Singapore, Singapore
Yi Liu, Ph.D Student , National University of Singapore, Singapore, Singapore
Lwin Min Kyaw, Ph.D Student , National University of Singapore, Singapore, Singapore
Yi Jie Ngoo , National University of Singapore, Singapore, Singapore
Eng Fong Chor, Ph.D. , National University of Singapore, Singapore, Singapore

Abstract:

  • E9-0925 (334.6KB) - Abstract Text
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