924
Low Leakage Current GaN MIS-HEMT with SiNx Gate Insulator using N2 Plasma Treatment

Tuesday, May 14, 2013: 10:40
Spruce, Mezzanine Level (Sheraton)
Shih-Chien Liu , National Chiao-Tung University Department of Materials Science and Engineering, Hsinchu, Taiwan
Huan-Chung Wang , National Chiao-Tung University Department of Materials Science and Engineering
Edward Yi Chang , National Chiao-Tung University Department of Materials Science and Engineering, Hsinchu, Taiwan

Abstract:

  • E9-0924 (109.9KB) - Abstract Text
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