871
Adjustable Switching Voltage Via Sol-Gel Derived and Ag In Situ Doped SiO2 Thin Films for ReRAM

Tuesday, May 14, 2013: 15:40
Norfolk, Mezzanine Level (Sheraton)
Yu-Ping Hsiao , Ph.D. Program in Electrical and Communications Engineering, Feng Chia University
Wen-Luh Yang, Prof. , Department of Electronic Engineering, Feng Chia University, Taichung, Taiwan
Yu-Hsien Lin , Department of Electronic Engineering, National United University
Yun-Chung Yang , Department of Electronic Engineering, National United University
Che-Chi Hsu , Department of Electronic Engineering, Feng Chia University
Cheng-Lin Peng , Department of Electronic Engineering, Feng Chia University
Chin-Hsuan Liao , Department of Electronic Engineering, Feng Chia University
Fun-Tat Chin , Ph.D. Program in Electrical and Communications Engineering, Feng Chia University
Sheng-Hsien Liu , Ph.D. Program in Electrical and Communications Engineering, Feng Chia University
Yuan-Ming Chang , Ph.D. Program in Electrical and Communications Engineering, Feng Chia University
Li-Min Lin , Ph.D. Program in Electrical and Communications Engineering, Feng Chia University

Abstract:

  • E5-0871 (119.7KB) - Abstract Text
See more of: 3D Integration/ReRAM/MEMS
See more of: E5: Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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