3D Integration/ReRAM/MEMS
Tuesday, May 14, 2013: 15:40-20:00
Norfolk, Mezzanine Level (Sheraton)
Chairs:
D.-L. Kwong
and
F. Roozeboom
15:40
Adjustable Switching Voltage Via Sol-Gel Derived and Ag In Situ Doped SiO2 Thin Films for ReRAM
Yu-Ping Hsiao, Ph.D. Program in Electrical and Communications Engineering, Feng Chia University;
Wen-Luh Yang, Prof., Department of Electronic Engineering, Feng Chia University;
Yu-Hsien Lin, Department of Electronic Engineering, National United University;
Yun-Chung Yang, Department of Electronic Engineering, National United University;
Che-Chi Hsu, Department of Electronic Engineering, Feng Chia University;
Cheng-Lin Peng, Department of Electronic Engineering, Feng Chia University;
Chin-Hsuan Liao, Department of Electronic Engineering, Feng Chia University;
Fun-Tat Chin, Ph.D. Program in Electrical and Communications Engineering, Feng Chia University;
Sheng-Hsien Liu, Ph.D. Program in Electrical and Communications Engineering, Feng Chia University;
Yuan-Ming Chang, Ph.D. Program in Electrical and Communications Engineering, Feng Chia University;
Li-Min Lin, Ph.D. Program in Electrical and Communications Engineering, Feng Chia University
17:00
InP-Si BiCMOS Heterointegration Using a Substrate Transfer Process
Marco Lisker, IHP;
Andreas Trusch, IHP;
Andreas Krüger, IHP;
Mirko Fraschke, IHP;
Philipp Kulse, IHP;
Yevgen Borokhovych, IHP;
Bernd Tillack, Dr., IHP;
Ina Ostermay, FBH;
Tomas Krämer, FBH;
Andreas Thies, FBH;
Olaf Krüger, FBH;
Franz-Josef Schmückle, FBH;
Viktor Krozer, FBH;
Wolfgang Heinrich, TU Berlin
