956
RF-Sputtered HfO2 Gate Insulator in High-Performance AlGaN/GaN MOS-HEMTs

Tuesday, May 14, 2013
Osgoode Ballroom, Lower Concourse Level (Sheraton)
Ogyun Seok, M.S. , Seoul National University
Woojin Ahn, B.S , Seoul National University
Min-Woo Ha, Dr. , Korea Electronics Technology Institute
Min-Koo Han , Seoul National University, Seoul, South Korea

Abstract:

  • E9-0956 (147.5KB) - Abstract Text
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