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On the Evolution of Switching Oxide Traps in the HfO2/TiN Gate Stack Subjected to Positive- and Negative-Bias Temperature Stressing

Tuesday, May 14, 2013: 15:20
Norfolk, Mezzanine Level (Sheraton)
Yuan Gao , Nanyang Technological University, Singapore, Singapore
Diing Shenp Ang, Ph.D. , Nanyang Avenue, Singapore 639798, Nanyang Technological University, Singapore, Singapore
Chen Jie Gu , Nanyang Technological University, Singapore, Nanyang Technological University, SIngapore, Singapore

Abstract:

  • E5-0870 (230.1KB) - Abstract Text
See more of: Si Channel: Gate Stack Reliability
See more of: E5: Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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