Strain Technology and Characterization

Tuesday, May 14, 2013: 14:00-15:00
Dominion Ballroom North, Second Floor (Sheraton)
Chairs:
Siegfried Selberherr and Yasuhisa Omura, Ph. D
14:00
890
Temperature Influence on Strained nMuGFETs after Proton Radiation
Caio Cesar Mendes Bordallo, Centro Universitário da FEI; Paula Ghedini Der Agopian, University of Sao Paulo; Joao Antonio Martino, University of Sao Paulo; Eddy Simoen, imec; Cor Claeys, imec
14:20
891
Comparative Experimental Study between Tensile and Compressive Uniaxially Stressed nMuGFETs under X-ray Radiation Focusing on Analog Behavior
V. V. Peruzzi, Centro Universitário da FEI; S. P. Gimenez, Centro Universitário da FEI; Paula Ghedini Der Agopian, Centro Universitário da FEI; Marcilei A.G. Silveira, Centro Universitário da FEI; Joao Antonio Martino, University of Sao Paulo; Eddy Simoen, imec; Cor Claeys, K.U. Leuven
14:40
892
Fin Dimension Influence on Mechanical Stressors in Triple-Gate SOI nMOSFETs
Rudolf Theoderich Bühler, PhD, University of Sao Paulo; E. Simoen, imec; Paula Ghedini Der Agopian, University of Sao Paulo; Cor Claeys, imec; J. A. Martino, University of São Paulo
See more of: E6: Advanced Semiconductor-on-Insulator Technology and Related Physics 16
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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