892
Fin Dimension Influence on Mechanical Stressors in Triple-Gate SOI nMOSFETs

Tuesday, May 14, 2013: 14:40
Dominion Ballroom North, Second Floor (Sheraton)
Rudolf Theoderich Bühler, PhD , University of Sao Paulo, Sao Paulo, Brazil
E. Simoen , imec
Paula Ghedini Der Agopian , University of Sao Paulo, Sao Paulo, Brazil
Cor Claeys , imec
J. A. Martino , University of São Paulo

Abstract:

  • E6-0892 (148.5KB) - Abstract Text
See more of: Strain Technology and Characterization
See more of: E6: Advanced Semiconductor-on-Insulator Technology and Related Physics 16
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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