III-V Devices and Characterization
Wednesday, May 15, 2013: 15:40-17:30
Provincial Ballroom North, Second Floor (Sheraton)
Chairs:
Akira Toriumi
and
Yaw S. Obeng
15:40
(Invited) InGaSb MOSFET Channel on Metamorphic Buffer: Materials, Interfaces and Process Options
Andrew Greene, CNSE University at Albany;
Shailesh Madisetti, CNSE University at Albany;
P. Nagaiah, University at Albany-SUNY;
Vadim Tokranov, Ph.D., CNSE University at Albany;
Michael Yakimov, Ph.D., CNSE University at Albany;
R. Moore, University at Albany-SUNY;
Serge Oktyabrsky, Ph.D., CNSE University at Albany
16:10
(Invited) III-V/High-k Defects: DIGS vs. Border Traps
Christopher L. Hinkle, University of Texas at Dallas;
Rohit V. Galatage, University of Texas at Dallas;
Hong Dong, University of Texas at Dallas;
Sarkar R. M. Anwar, University of Texas at Dallas;
Barry Brennan, University of Texas at Dallas;
Robert M. Wallace, University of Texas at Dallas;
Eric M. Vogel, Georgia Institute of Technology
16:40
Capacitance-Voltage Characteristics of Gate-All-Around InxGa1-XAs Nanowire Transistor
Quazi D. M. Khosru, Bangladesh University of Engineering and Technology;
Saeed Uz Zaman Khan, Bangladesh University of Engineering and Technology;
Md. Shafayat Hossain, Bangladesh University of Engineering and Technology;
Fahim Ur Rahman, Bangladesh University of Engineering and Technology;
Md. Obaidul Hossen, Bangladesh University of Engineering and Technology;
Rifat Zaman, Bangladesh University of Engineering and Technology
