769
Capacitance-Voltage Characteristics of Gate-All-Around InxGa1-XAs Nanowire Transistor

Wednesday, May 15, 2013: 16:40
Provincial Ballroom North, Second Floor (Sheraton)
Quazi D. M. Khosru , Bangladesh University of Engineering and Technology
Saeed Uz Zaman Khan , Bangladesh University of Engineering and Technology, Dhaka, Bangladesh
Md. Shafayat Hossain , Bangladesh University of Engineering and Technology, Dhaka, Bangladesh
Fahim Ur Rahman , Bangladesh University of Engineering and Technology
Md. Obaidul Hossen , Bangladesh University of Engineering and Technology
Rifat Zaman , Bangladesh University of Engineering and Technology

Abstract:

  • E2-0769 (188.6KB) - Abstract Text
See more of: III-V Devices and Characterization
See more of: E2: Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
<< Previous Abstract | Next Abstract >>