Patterning and Lithography Challenges Part 2

Tuesday, May 14, 2013: 13:20-14:00
Norfolk, Mezzanine Level (Sheraton)
Chairs:
Hiroshi Iwai and F. Roozeboom
13:20
866
On the Optimization of Ebeam Lithography Using Hydrogen Silsesquioxane (HSQ) for Innovative Self-Aligned CMOS Process
Remi Coquand, STMicroelectronics; Stephane Monfray, STMicroelectronics; Jonathan Pradelles, CEA-LETI; Luc Martin, ASELTA; Marie-Pierre Samson, STMicroelectronics; Jessy Bustos, STMicroelectronics; Sylvain Barraud, CEA LETI; Frederic Boeuf, STMicroelectronics; Thomas Skotnicki, STMicroelectronics; Gérard Ghibaudo, IMEP-LAHC; Thierry Poiroux, CEA-LETI; Olivier Faynot, CEA-LETI
 
867
Striation-Formation during Oxide Plasma-Etch for a 0.35um Technology (Cancelled)
See more of: E5: Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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