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On the Optimization of Ebeam Lithography Using Hydrogen Silsesquioxane (HSQ) for Innovative Self-Aligned CMOS Process

Tuesday, May 14, 2013: 13:20
Norfolk, Mezzanine Level (Sheraton)
Remi Coquand , STMicroelectronics, Grenoble, France
Stephane Monfray , STMicroelectronics
Jonathan Pradelles , CEA-LETI
Luc Martin , ASELTA
Marie-Pierre Samson , STMicroelectronics
Jessy Bustos , STMicroelectronics
Sylvain Barraud , CEA LETI
Frederic Boeuf , STMicroelectronics
Thomas Skotnicki , STMicroelectronics
Gérard Ghibaudo , IMEP-LAHC
Thierry Poiroux , CEA-LETI
Olivier Faynot , CEA-LETI

Abstract:

  • E5-0866 (1958.1KB) - Abstract Text
See more of: Patterning and Lithography Challenges Part 2
See more of: E5: Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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