1856
Hot Hole-Induced Device Degradation By Drain Junction Reverse Current

Wednesday, October 30, 2013
Grand Ballroom, Tower 2, Grand Ballroom Level (Hilton San Francisco Union Square)
Kwang-Soo Kim , Samsung Semiconductor Institute of Technology, Yongin-si, Gyeonggi-do, South Korea
Juneui Song , Samsung Electronics Co.
Duheon Song , Samsung Electronics Co.
Byoungdeog Choi , Sungkyunkwan University, Suwon-si, South Korea

Abstract:

See more of: Solid State Topics General Session (Poster)
See more of: E1: Solid State Topics General Session
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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