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High Quality of Ge1-X Six  (0.9 ≤ x ≤ 0.95) Buffers  Grown On 60 off Si(100) By Using Low Temperature Ge Seed Layer

Wednesday, October 30, 2013
Grand Ballroom, Tower 2, Grand Ballroom Level (Hilton San Francisco Union Square)
Chi Lang Nguyen, Ph.D candidate , National Chiao Tung University, Hsinchu, Taiwan

Abstract:

See more of: Solid State Topics General Session (Poster)
See more of: E1: Solid State Topics General Session
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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