2172
Effect of Sputtering Pressure On the Electrical Characteristics of RF Magnetron Sputtering Processed Zinc Tin Oxide Thin Film Transistors
Effect of Sputtering Pressure On the Electrical Characteristics of RF Magnetron Sputtering Processed Zinc Tin Oxide Thin Film Transistors
Tuesday, October 29, 2013
Grand Ballroom, Tower 2, Grand Ballroom Level (Hilton San Francisco Union Square)
Abstract:
- E10-2172 (57.3KB) - Abstract Text