2172
		Effect of Sputtering Pressure On the Electrical Characteristics of RF Magnetron Sputtering Processed Zinc Tin Oxide Thin Film Transistors
	
					
	
	Effect of Sputtering Pressure On the Electrical Characteristics of RF Magnetron Sputtering Processed Zinc Tin Oxide Thin Film Transistors
	Tuesday, October 29, 2013
	Grand Ballroom, Tower 2, Grand Ballroom Level (Hilton San Francisco Union Square)
	
	
	
	Abstract:
- E10-2172 (57.3KB) - Abstract Text
