1954
MOCVD Growth of InAlN/GaN Heterostructures on Si Substrate for UV Photodiode Application
MOCVD Growth of InAlN/GaN Heterostructures on Si Substrate for UV Photodiode Application
Thursday, October 31, 2013: 11:40
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Abstract:
- E3-1954 (28.0KB) - Abstract Text