1953
Growth of GaN by MOCVD on Rare Earth Oxide on Si(111)
Growth of GaN by MOCVD on Rare Earth Oxide on Si(111)
Thursday, October 31, 2013: 11:20
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Abstract:
- E3-1953 (393.9KB) - Abstract Text