Material Synthesis and Processing

Thursday, October 31, 2013: 10:00-12:10
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Mietek Bakowski and N. Ohtani
Elements of GaN-Based Integrated Power Electronics
Christian Wetzel, Rensselaer Polytechnic Institute
Materials Issues for Vertical Gallium Nitride Power Devices
Adrian D. Williams, Boston University; Theodore D. Moustakas, Boston University
Electrochemical Hydrogenation of Dimensional Carbon
Kevin M. Daniels, University of South Carolina; Shamaita Shetu, University of South Carolina; John Staser, University of South Carolina; John W. Weidner, University of South Carolina; Christopher Williams, University of South Carolina; Tangali Sudarshan, University of South Carolina; M.V.S. Chandrashekhar, University of South Carolina
Abrasive-Free Polishing of SiC Wafer Utilizing Catalyst Surface Reaction
Yasuhisa Sano, Osaka University; Kenta Arima, Osaka University; Kazuto Yamauchi, Osaka University
Growth of GaN by MOCVD on Rare Earth Oxide on Si(111)
F. Erdem Arkun, Ph.D., Translucent Inc.; Rytis Dargis, Ph.D., Translucent Inc.; Andrew Clark, Ph.D., Translucent Inc.; Robin S. Smith, Ph.D., Translucent Inc.; Michael Lebby, Ph.D., Translucent Inc.; Jeffrey M. Leathersich, College of Nanoscale Science and Engineering, State University of New York; F. Shahedipour-Sandvik, College of Nanoscale Science and Engineering, State University of New York
MOCVD Growth of InAlN/GaN Heterostructures on Si Substrate for UV Photodiode Application (Cancelled)
Concluding Remarks