Material Synthesis and Processing

Thursday, October 31, 2013: 10:00-12:10
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Chairs:
Mietek Bakowski and N. Ohtani
10:00
1949
Elements of GaN-Based Integrated Power Electronics
Christian Wetzel, Rensselaer Polytechnic Institute
10:20
1950
Materials Issues for Vertical Gallium Nitride Power Devices
Adrian D. Williams, Boston University; Theodore D. Moustakas, Boston University
10:40
1951
Electrochemical Hydrogenation of Dimensional Carbon
Kevin M. Daniels, University of South Carolina; Shamaita Shetu, University of South Carolina; John Staser, University of South Carolina; John W. Weidner, University of South Carolina; Christopher Williams, University of South Carolina; Tangali Sudarshan, University of South Carolina; M.V.S. Chandrashekhar, University of South Carolina
11:00
1952
Abrasive-Free Polishing of SiC Wafer Utilizing Catalyst Surface Reaction
Yasuhisa Sano, Osaka University; Kenta Arima, Osaka University; Kazuto Yamauchi, Osaka University
11:20
1953
Growth of GaN by MOCVD on Rare Earth Oxide on Si(111)
F. Erdem Arkun, Ph.D., Translucent Inc.; Rytis Dargis, Ph.D., Translucent Inc.; Andrew Clark, Ph.D., Translucent Inc.; Robin S. Smith, Ph.D., Translucent Inc.; Michael Lebby, Ph.D., Translucent Inc.; Jeffrey M. Leathersich, College of Nanoscale Science and Engineering, State University of New York; F. Shahedipour-Sandvik, College of Nanoscale Science and Engineering, State University of New York
 
1954
MOCVD Growth of InAlN/GaN Heterostructures on Si Substrate for UV Photodiode Application (Cancelled)
12:00
Concluding Remarks
See more of: E3: GaN and SiC Power Technologies 3
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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