Selective Ni Removal Deposited on Ge at Different Annealing Temperatures

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Selective Ni Removal Deposited on Ge at Different Annealing Temperatures

Wednesday, October 30, 2013: 10:20

Continental 8, Tower 3, Ballroom Level (Hilton San Francisco Union Square)

Masayuki Otsuji, master , Dainippon screen, Leuven, Belgium

Y. Yoshida , Dainippon Screen Mfg. Co., Ltd.

H. Takahashi , Dainippon Screen Mfg. Co., Ltd.

J. Snow , Dainippon Screen Mfg. Co., Ltd.

F. Sebaai , imec

Paul W. Mertens , imec, Leuven, Belgium

M. Sato , Dainippon Screen Mfg. Co., Ltd.

H. Shirakawa , Dainippon Screen Mfg. Co., Ltd.

H. Uchida , Dainippon Screen Mfg. Co., Ltd.

Abstract: