Non-silicon Material Cleaning and Conditioning

Wednesday, October 30, 2013: 08:10-11:00
Continental 8, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Chairs:
Paul W. Mertens and Jeongwon PARK
08:10
Introductory Remarks
08:20
(Invited) A Novel Approach to Clean Surface for High Mobility Channel Materials with In Situ Atomic Hydrogen Clean
Jeongwon Park, Applied Materials; Joe Griffith Cruz, Applied Materials; Bo Zheng, PhD, Applied Materials; Jerry Gelatos, PhD, Applied Materials; Murali Narasimhan, Applied Materials; Pravin K Narwankar, PhD, Applied Materials
09:00
Wet-Chemical Etching of InGaAs for Advanced CMOS Processing
Dennis H. van Dorp, imec; S. Arnauts, Imec; Daniel Cuypers, KULeuven; Jens Rip, imec; Frank Holsteyns, imec; Stefan De Gendt, imec
09:20
Self-Assembly of Alkanethiols to Protect GaAs(100)
Pablo Mancheno-Posso, University of Arizona; Anthony J. Muscat, University of Arizona
09:40
Coffee Break
10:00
Study of InP Surfaces after Wet Chemical Treatments
Daniel Cuypers, KULeuven; Dennis H. van Dorp, imec, Belgium; Massimo Tallarida, Brandenburg University of Technology Cottbus; Simone Brizzi, Brandenburg University of Technology Cottbus; Leonard Rodriguez, Imec; Thierry Conard, IMEC; Sophia Arnauts, Imec; Dieter Schmeisser, Brandenburg University of Technology Cottbus; Christoph Adelmann, Imec; Stefan De Gendt, KULeuven
10:20
Selective Ni Removal Deposited on Ge at Different Annealing Temperatures
Masayuki Otsuji, master, Dainippon screen; Y. Yoshida, Dainippon Screen Mfg. Co., Ltd.; H. Takahashi, Dainippon Screen Mfg. Co., Ltd.; J. Snow, Dainippon Screen Mfg. Co., Ltd.; F. Sebaai, imec; Paul W. Mertens, imec; M. Sato, Dainippon Screen Mfg. Co., Ltd.; H. Shirakawa, Dainippon Screen Mfg. Co., Ltd.; H. Uchida, Dainippon Screen Mfg. Co., Ltd.
10:40
Surface Processing for Area Selective Mist Deposition of Nanocrystalline Quantum Dot Films
Ju-Hung Chao, Master Student, The Pennsylvania State University; Aditya Kshirsagar, PhD, Intel Corp; Jerzy Ruzyllo, The Pennsylvania State University
 
Surface Preparation of Si and Ge Wafers Using Functional Water (Cancelled)