1940
3D TCAD Simulations for More Efficient SiC Power Devices Design

Wednesday, October 30, 2013: 12:10
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Luong Viêt Phung, Dr. , Laboratoire Ampère
Dominique Planson, Pr. , Laboratoire Ampère, Villeurbanne, France
Pierre Brosselard, Dr. , Laboratoire Ampère
Dominique Tournier, Dr. , Laboratoire Ampère
Christian Brylinski, Pr. , Laboratoire des Multimatériaux et Interfaces

Abstract:

  • E3-1940 (230.1KB) - Abstract Text
See more of: Manufacturing Challenges
See more of: E3: GaN and SiC Power Technologies 3
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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