Manufacturing Challenges

Wednesday, October 30, 2013: 10:10-12:30
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Chairs:
Rajendra Singh and Sunny Kedia
10:10
1934
Manufacturing Challenges in Wide Band Gap (WBG) Power Electronics
Krishna Shenai, Argonne National Laboratory
10:30
1935
High Voltage GaN Technology in a Silicon CMOS Environment: Challenges and Opportunities
H. Rusty Harris, Texas A&M University; Derek W. Johnson, Texas A&M University; Richard J.W. Hill, SEMATECH; Ed Piner, Texas State University; Man Hoi Wong, SEMATECH; Rinus T.P. Lee, SEMATECH
10:50
1936
Production Readiness of AlGaN/GaN HEMT on 6”/8” Si
Dong Seung Lee, Veeco MOCVD Operations; Jie Su, Veeco MOCVD Operations; Balakrishnan Krishnan, Veeco MOCVD Operations; George D. Papasouliotis, Veeco MOCVD Operations; Ajit Paranjpe, Veeco MOCVD Operations
11:10
1937
Performance, Reliability and YIELD Considerations In The Manufacturing Of POWER Electronics Based On SiC and GaN
Rajendra Singh, Clemson University; Githin F. Alapatt, Clemson University
11:30
1938
Synchrotron X-ray Topography Studies of the Evolution of the Defect Microstructure in Physical Vapor Transport Grown 4H-SiC Single Crystals
Michael Dudley, B.Sc., Ph.D, Stony Brook University; Balaji Raghothamachar, Stony Brook University; Huanhuan Wang, Stony Brook University; Fangzhen Wu, Stony Brook University; Shayan Byrappa, Stony Brook University; Gil Chung, Dow Corning Compound Semiconductor Solutions; Edward K Sanchez, Dow Corning Compound Semiconductor Solutions; Stephan Mueller, Dow Corning Compound Semiconductor Solutions; Darren Hansen, Dow Corning Compound Semiconductor Solutions; Mark Loboda, Dow Corning Compound Semiconductor Solutions
11:50
1939
Basal Plane Dislocation Mitigation Using High Temperature Annealing in 4H-SiC Epitaxy
Nadeemullah A Mahadik, Ph. D., Naval Research Laboratory; Anindya Nath, George Mason University; Eugene A Imhoff, Naval Research Laboratory; Robert E Stahlbush, Ph. D., Naval Research Laboratory; Roberta Nipoti, CNR-IMM Bologna
12:10
1940
3D TCAD Simulations for More Efficient SiC Power Devices Design
Luong Viêt Phung, Dr., Laboratoire Ampère; Dominique Planson, Pr., Laboratoire Ampère; Pierre Brosselard, Dr., Laboratoire Ampère; Dominique Tournier, Dr., Laboratoire Ampère; Christian Brylinski, Pr., Laboratoire des Multimatériaux et Interfaces
See more of: E3: GaN and SiC Power Technologies 3
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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