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Synchrotron X-ray Topography Studies of the Evolution of the Defect Microstructure in Physical Vapor Transport Grown 4H-SiC Single Crystals
Synchrotron X-ray Topography Studies of the Evolution of the Defect Microstructure in Physical Vapor Transport Grown 4H-SiC Single Crystals
Wednesday, October 30, 2013: 11:30
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Abstract:
- E3-1938 (29.2KB) - Abstract Text