1939
Basal Plane Dislocation Mitigation Using High Temperature Annealing in 4H-SiC Epitaxy

Wednesday, October 30, 2013: 11:50
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Nadeemullah A Mahadik, Ph. D. , Naval Research Laboratory, Washington, DC
Anindya Nath , George Mason University
Eugene A Imhoff , Naval Research Laboratory
Robert E Stahlbush, Ph. D. , Naval Research Laboratory, Washington, DC
Roberta Nipoti , CNR-IMM Bologna

Abstract:

  • E3-1939 (1355.6KB) - Abstract Text
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