1920
Reliability of GaN HEMTs: Electrical and Radiation-Induced Failure Mechanism

Tuesday, October 29, 2013: 11:50
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Travis J Anderson , Naval Research Laboratory, Washington, DC
Andrew D Koehler , Naval Research Laboratory
Marko J Tadjer , Naval Research Laboratory
Karl D Hobart , Naval Research Laboratory
Petra Specht , University of California, Berkeley
Matthew Porter , Naval Postgradute School
Todd R Weatherford , Naval Postgradute School
Brad Weaver , Naval Research Laboratory
Jennifer K. Hite , Naval Research Laboratory
Fritz J Kub , Naval Research Laboratory

Abstract:

  • E3-1920 (287.5KB) - Abstract Text
See more of: Power Device Reliability 1
See more of: E3: GaN and SiC Power Technologies 3
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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