Power Device Reliability 1
Tuesday, October 29, 2013: 10:10-12:10
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Chairs:
Aris Christou
and
Mietek Bakowski
10:30
GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues
Gaudenzio Meneghesso, Full Professor, University of Padova;
Matteo Meneghini, PhD, University of Padova;
Davide Bisi, University of Padova;
Riccardo Silvestri, Master, University of Padova;
Alberto Zanandrea, Master, University of Padova;
Oliver Hilt, Dr., Leibniz-Institut fuer Hoechstfrequenztechnik;
Eldad Bahat-Treidel, Dr., Leibniz-Institut fuer Hoechstfrequenztechnik;
F. Brunner, Leibniz-Institut fuer Hoechstfrequenztechnik;
A. Knauer, Leibniz-Institut fuer Hoechstfrequenztechnik;
Joachim Wuerfl, Dr., Leibniz-Institut fuer Hoechstfrequenztechnik;
Enrico Zanoni, Full Professor, University of Padova
11:30
Progress in SiC MOSFET Reliability
David R. Hughart, Sandia National Laboratories;
Jack D. Flicker, Sandia National Laboratories;
Sandeepan DasGupta, Sandia National Laboratories;
Stan Atcitty, Sandia National Laboratories;
Robert J. Kaplar, Sandia National Laboratories;
Matthew J. Marinella, Sandia National Laboratories
11:50
Reliability of GaN HEMTs: Electrical and Radiation-Induced Failure Mechanism
Travis J Anderson, Naval Research Laboratory;
Andrew D Koehler, Naval Research Laboratory;
Marko J Tadjer, Naval Research Laboratory;
Karl D Hobart, Naval Research Laboratory;
Petra Specht, University of California, Berkeley;
Matthew Porter, Naval Postgradute School;
Todd R Weatherford, Naval Postgradute School;
Brad Weaver, Naval Research Laboratory;
Jennifer K. Hite, Naval Research Laboratory;
Fritz J Kub, Naval Research Laboratory
