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The Effects of Defects on the Breakdown Voltage of GaN High Power Electronic Devices

Tuesday, October 29, 2013: 10:50
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Kenneth A. Jones , Army Research Lab, Adelphia, MD
M. A. Derenge , Army Research Lab
R. P. Tompkins , Army Research Lab
K. W. Kirchner , Army Research Lab
J. Leach , Kyma Technologies
P. Suvarna , CNSE, SUNY-Albany
F. Shahedipour , CNSE, SUNY-Albany

Abstract:

See more of: Power Device Reliability 1
See more of: E3: GaN and SiC Power Technologies 3
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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