1893
Unexpected Sources of Basal Plane Dislocations in 4H‑SiC Epitaxy
Unexpected Sources of Basal Plane Dislocations in 4H‑SiC Epitaxy
Monday, October 28, 2013: 08:30
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Abstract:
- E3-1893 (2767.1KB) - Abstract Text