Monday, October 28, 2013: 08:00-10:00
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Chairs:
Krishna Shenai
and
N. Ohtani
08:10
A Thermodynamic Interpretation of PVT Growth of Single Crystal SiC Material and Challenges in Reducing Dislocations
Tatsuo Fujimoto, Ph.D., Nippon Steel & Sumitomo Metal Corporation;
Masakazu Katsuno, Nippon Steel & Sumitomo Metal Corporation;
Hiroshi Tsuge, Nippon Steel & Sumitomo Metal Corporation;
Shinya Sato, Nippon Steel & Sumitomo Metal Corporation;
Shohji Ushio, Nippon Steel & Sumitomo Metal Corporation;
Komomo Tani, Nippon Steel & Sumitomo Metal Corporation;
Hirokatsu Yashiro, Nippon Steel & Sumitomo Metal Corporation;
Hohsei Hirano, Nippon Steel & Sumitomo Metal Corporation;
Takayuki Yano, Nippon Steel & Sumitomo Metal Corporation
09:10
Growth of High-Quality GaN Template from Nanometer-Size Lattice Channels by Hydride Vapor Phase Epitaxy
Akira Usui, Nitride Semiconductor Department, Furukawa Co., Ltd.;
Hiroki Goto, Nitride Semiconductor Department, Furukawa Co., Ltd.;
Toshiharu Matsueda, Nitride Semiconductor Department, Furukawa Co., Ltd.;
Haruo Sunakawa, Nitride Semiconductor Department, Furukawa Co., Ltd.;
Takuya Nakagawa, Nitride Semiconductor Department, Furukawa Co., Ltd.;
Akiko Okada, Institute for Nanoscience and Nanotechnology, Waseda University;
Jun Mizuno, Institute for Nanoscience and Nanotechnology, Waseda University;
Atsushi A. Yamaguchi, Optoelectronic Device System R&D Center, Kanazawa Institute of Technology;
Hidetoshi Shinohara, Nano Processing System Division, Toshiba Machine Co., Ltd.;
Hiroshi Goto, Nano Processing System Division, Toshiba Machine Co., Ltd.
